Dense plasma focusA dense plasma focus (DPF) is a type of plasma generating system originally developed as a fusion power device starting in the early 1960s. The system demonstrated scaling laws that suggested it would not be useful in the commercial power role, and since the 1980s it has been used primarily as a fusion teaching system, and as a source of neutrons and X-rays. The original concept was developed in 1954 by N.V. Filippov, who noticed the effect while working on early pinch machines in the USSR.
PhotodetectorPhotodetectors, also called photosensors, are sensors of light or other electromagnetic radiation. There is a wide variety of photodetectors which may be classified by mechanism of detection, such as photoelectric or photochemical effects, or by various performance metrics, such as spectral response. Semiconductor-based photodetectors typically photo detector have a p–n junction that converts light photons into current. The absorbed photons make electron–hole pairs in the depletion region.
Inertial confinement fusionInertial confinement fusion (ICF) is a fusion energy process that initiates nuclear fusion reactions by compressing and heating targets filled with fuel. The targets are small pellets, typically containing deuterium (2H) and tritium (3H). Energy is deposited in the target's outer layer, which explodes outward. This produces a reaction force in the form of shock waves that travel through the target. The waves compress and heat it. Sufficiently powerful shock waves generate fusion.
X-ray generatorAn X-ray generator is a device that produces X-rays. Together with an X-ray detector, it is commonly used in a variety of applications including medicine, X-ray fluorescence, electronic assembly inspection, and measurement of material thickness in manufacturing operations. In medical applications, X-ray generators are used by radiographers to acquire x-ray images of the internal structures (e.g., bones) of living organisms, and also in sterilization. An X-ray generator generally contains an X-ray tube to produce the X-rays.
Focal plane tomographyIn radiography, focal plane tomography is tomography (imaging a single plane, or slice, of an object) by simultaneously moving the X-ray generator and X-ray detector so as to keep a consistent exposure of only the plane of interest during image acquisition. This was the main method of obtaining tomographs in medical imaging until the late-1970s. It has since been largely replaced by more advanced imaging techniques such as CT and MRI. It remains in use today in a few specialized applications, such as for acquiring orthopantomographs of the jaw in dental radiography.
Lockheed Martin Compact Fusion ReactorThe Lockheed Martin Compact Fusion Reactor (CFR) is a fusion power project at Lockheed Martin’s Skunk Works. Its high-beta configuration, which implies that the ratio of plasma pressure to magnetic pressure is greater than or equal to 1 (compared to tokamak designs' 0.05), allows a compact design and expedited development. The project was active between 2010 and 2019, after that date there have been no updates and it appears the division has shut down.
Gallium arsenideGallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.
Indium gallium arsenideIndium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics.
Mercury cadmium tellurideHg1−xCdxTe or mercury cadmium telluride (also cadmium mercury telluride, MCT, MerCad Telluride, MerCadTel, MerCaT or CMT) is a chemical compound of cadmium telluride (CdTe) and mercury telluride (HgTe) with a tunable bandgap spanning the shortwave infrared to the very long wave infrared regions. The amount of cadmium (Cd) in the alloy can be chosen so as to tune the optical absorption of the material to the desired infrared wavelength. CdTe is a semiconductor with a bandgap of approximately 1.
DiodeA diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance). It has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other. A semiconductor diode, the most commonly used type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. It has an exponential current–voltage characteristic. Semiconductor diodes were the first semiconductor electronic devices.
