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New experimental study of heavy ion and proton induced SEU at reduced voltage (i.e. reduced critical charge) reveals interesting results. It is shown that the heavy ion cross section and microprobe mapping scale like the threshold LET and the parameter, which is almost invariant under bias changes, is the effective charge collection depth. For studying proton induced SEU and surface-barrier-detector spectra we use protons with energies from 5.6 to 300MeV. The results are analyzed in view of the processes involved in low energy deposition by protons. Detailed calculations show the importance of straggling in proton direct ionization which might be the leading process in very sensitive devices like photodiodes.
Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Francesco Gramuglia, Myung Jae Lee
Shaik Mohammed Zakeeruddin, David Lyndon Emsley, Ursula Röthlisberger, Wolfgang Richard Tress, Felix Thomas Eickemeyer, Yuhang Liu, Haizhou Lu, Likai Zheng, Ulf Anders Hagfeldt, Xiong Li, Zaiwei Wang, Fan Fu, Paramvir Ahlawat, Aditya Mishra, Claudia Esther Avalos, Brian Irving Carlsen, Xianfu Zhang, Anand Agarwalla, Ying Yang