Volta potentialThe Volta potential (also called Volta potential difference, contact potential difference, outer potential difference, Δψ, or "delta psi") in electrochemistry, is the electrostatic potential difference between two metals (or one metal and one electrolyte) that are in contact and are in thermodynamic equilibrium. Specifically, it is the potential difference between a point close to the surface of the first metal and a point close to the surface of the second metal (or electrolyte). The Volta potential is named after Alessandro Volta.
Atomic layer depositionAtomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors (also called "reactants"). These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. A thin film is slowly deposited through repeated exposure to separate precursors.
MOSFETThe metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.
Self-aligned gateIn semiconductor electronics fabrication technology, a self-aligned gate is a transistor manufacturing approach whereby the gate electrode of a MOSFET (metal–oxide–semiconductor field-effect transistor) is used as a mask for the doping of the source and drain regions. This technique ensures that the gate is naturally and precisely aligned to the edges of the source and drain. The use of self-aligned gates in MOS transistors is one of the key innovations that led to the large increase in computing power in the 1970s.
Electric potentialThe electric potential (also called the electric field potential, potential drop, the electrostatic potential) is defined as the amount of work energy needed per unit of electric charge to move this charge from a reference point to the specific point in an electric field. More precisely, it is the energy per unit charge for a test charge that is so small that the disturbance of the field under consideration is negligible.
EEPROMEEPROM (also called E2PROM) stands for electrically erasable programmable read-only memory and is a type of non-volatile memory used in computers, usually integrated in microcontrollers such as smart cards and remote keyless systems, or as a separate chip device to store relatively small amounts of data by allowing individual bytes to be erased and reprogrammed. EEPROMs are organized as arrays of floating-gate transistors. EEPROMs can be programmed and erased in-circuit, by applying special programming signals.
High-κ dielectricIn the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide. High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components, colloquially referred to as extending Moore's Law.
Strained siliconStrained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon–germanium (). As the atoms in the silicon layer align with the atoms of the underlying silicon germanium layer (which are arranged a little farther apart, with respect to those of a bulk silicon crystal), the links between the silicon atoms become stretched - thereby leading to strained silicon.
Repressed memoryRepressed memory is a controversial, and largely scientifically discredited, psychiatric phenomenon which involves an inability to recall autobiographical information, usually of a traumatic or stressful nature. The concept originated in psychoanalytic theory where repression is understood as a defense mechanism that excludes painful experiences and unacceptable impulses from consciousness. Repressed memory is presently considered largely unsupported by research.
Ion implantationIon implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research. The ions can alter the elemental composition of the target (if the ions differ in composition from the target) if they stop and remain in the target.
