KFM detection of quantified charges injected into a thin SiO2 layer containing Si nps embedded by ultra low energy ion implantation using stencil lithography
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Silicon technology has advanced through the past four decades at exponential rate both in performance and productivity. Along with the miniaturization, the power demand grew also exponentially. New technologies are studied in order to develop switches that ...
Recent progress in integrating ferroelectrics directly on silicon opens the exciting possibility of implementing ferroelectric-semiconductor devices. One of the major problems for such integration is the instability of the ferroelectric state in very thin ...
Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...
In a semiconductor market dominated by portable consumer applications, embedded flash memory technology has experienced a rapid diffusion. It is now considered the preferred solid-state memory solution for its non-volatile characteristics, high read and wr ...
This thesis aims at the site-specific realization of self-assembled field-effect transistors (FETs) based on semiconducting Zinc oxide NWs and their application towards chemical and bio-sensing in liquid medium. At first, a solution based growth method for ...
Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...
Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid appro ...
The floating gate (FG) potential VFG in a non–volatile flash memory (NVM) device is the main parameter controlling the behavior of the cell. A common technique to model VFG is based on the calculation of the coupling coefficients between all the terminals ...
Coupling coefficients calculation is known to be a critical issue in embedded Non-Volatile Memory (eNVM) compact modeling. In this paper we have implemented the charge balance method within the Brew’s Charge Sheet Model equation, determining the floating g ...
Flash memories based on nanoparticles (NPs) offer an attractive alternative for performance enhancement and size downscaling of non-volatile memory cells. In these devices, Coulomb blockade and quantized charging effects can be exploited at room temperatur ...