Design, characterisation and modelling of a high current DC arc plasma source for silicon and silicon carbide processing at low pressure
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The aim of this thesis work is to study the spin-dependent transport in multiwalled carbon nanotubes (MWNT). To do so, the electrical resistance of MWNT contacted between ferromagnetic electrodes has been measured, as a function of the contacts magnetic co ...
The potential, time, and concn. dependence of the potentiostatic electropolymn. of the thienyl-substituted transition metal complex [Os(bttpy)22+] onto platinum disk microelectrodes is reported, bttpy is 4'-(5-(2,2'-bithienyl))-2,2':6',2''-terpyridine. Oxi ...
Zinc oxide (ZnO) is a material that belongs to the family of Transparent Conductives Oxides (TCO). Its non-toxicity and the abundant availability in the Earth's crust of its components make it an ideal candidate as electrical transparent contact for thin-f ...
In this work, a new type of short water vapor treatment of the interface between the p- and i-layer is presented. This novel treatment is performed under vacuum below 1 mbar for 5 min and considerably reduces the i-layer boron contamination in amorphous si ...
When silicon thin films are deposited by plasma enhanced chemical vapor deposition in a plasma regime close to powder formation, a new type of material, consisting of an amorphous matrix in which silicon nanocrystallites are embedded is obtained. This mate ...
Titanium dioxide (TiO2) is a widely investigated material for its biological compatibility, high dielectric constant and refractive index, chemical and mechanical resistance, and catalytic activity. Several different techniques are available to produce TiO ...
Light Induced Chemical Vapour Deposition (LICVD) of titanium dioxide thin films is studied in this work. It is shown that this technique enables to deposit locally and selectively a chosen crystalline phase with a precise controlled thickness at low substr ...
Microcrystalline silicon growth using very high frequency-glow discharge PECVD has been studied under conditions of high pressure and high VHF-power conditions. Hereby, the influence of the total gas flow and the silane concentration on the deposition rate ...
A study of the i-layer porosity as a function of the deposition parameters by PECVD technique, is presented here. It is demonstrated in particular, that for a fixed deposition rate of 2 Å/s, increasing the plasma power tends to increase the layer density, ...
A numerical two dimensional model to calculate the deposition uniformity over the whole electrode surface in large area rectangular plasma enhanced chemical vapour deposition reactors is presented. In this model, the three dimensional mass and species cont ...