Rate equation approach for diode lasers. II. Steady state solutions for compound systems
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The exceptional performance of self-assembled Quantum Dot (QD) materials renders them extremely appealing for their use as optical communications devices. As lasers, they feature reduced and temperature independent threshold current and proper emission wav ...
A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...
Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
It was about 125 years ago that the light bulb was commercialized by Thomas Edison. No doubt a brilliant invention at the time, today its low power conversion efficiency is one of the reasons why lighting in the western world has such high energy consumpti ...
We report charge trapping effects in a ferromagnetic (Ga,Mn)As thin film observed during measurements of the photovoltage under inhomogeneous illumination conditions. Using a laser diode as the excitation source, the temperature-dependent response has been ...
An optical device for amplifying or emitting an optical beam of given wavelength comprises an optical source (20) in combination with a primary optical device (10) which is a semiconductor optical amplifier (SOA), a gain-clamped semiconductor optical ampli ...
The design, fabrication and characterization of Micro-electro-mechanical metal-air-insulator-semiconductor (MEM-MAIS) diode switch are originally reported. An abrupt switching from off-state to Fowler-Nordheim tunneling current in on-state is induced by th ...
Optical stimulation is a promising approach to investigate the local dynamic responses of cultured neurons. In particular, flash photolysis of caged compounds offers the advantage of allowing the rapid change of concentration of either extracellular or int ...
The authors report a direct measurement of the optical phonon intersubband hole relaxation time in a SiGe heterostructure and a quantitative determination of hole relaxation under electrically active conditions. The results were obtained by femtosecond res ...
We have fabricated a type of unique single-walled carbon nanotube field-effect transistor, in which the channel length is only 90 nm and aluminum and gold are used as its drain and source electrodes, respectively. The channel conductance oscillations cause ...