Light induced etching of GaAs in a zinc atmosphere
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Despite many years of intensive research there still remain many unresolved questions in powder and ceramic technology. A majority of these issues are linked to interfacial phenomena of atomic scale origin, which makes their experimental investigation very ...
Because of the strong electron-phonon coupling of the emitting 3d orbital in transition-metal (TM) ions, 3d systems exhibit luminescence with typically several hundred nm of spectral bandwidth. TM-ion-doped materials are, therefore, of high interest for ap ...
The authors demonstrate a sample method to achieve local tuning of optical modes in GaAs photonic crystal nanocavities by continuous wave laser-assisted oxidation in air atmosphere. By irradiation with a focused laser beam at power levels of a few tells of ...
Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
The launch of molecules from liquid surfaces in a time of flight mass spectrometer has been investigated using different sample preparation techniques, and by exposing the liquid samples to two different laser wavelengths, 337 nm from a N2 ultraviolet lase ...
The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering ga ...
A theoretical modeling framework is proposed to follow shape and residual stress evolutions of layered flexible display structures with respect to deposition, ambient temperature and relative humidity conditions. This model couples the mechanical equilibri ...
A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...
This study investigates the composition of free surfaces of neodymium-doped yttrium–aluminum–garnet, using energy minimization techniques. Atomistic modeling shows that the dopant is concentrated in a zone within 0.5 nm ̊of the surface, the enrichment fact ...
Selective dissolution of titanium through a laser patterned oxide film has been achieved in a 3M sulfuric acid-methanol electrolyte. The 250 nm thick oxide film was formed anodically on a flat titanium surface in 0.5 M sulfuric acid. The patterning of the ...