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The determination of the crystalline volume fraction from the Raman spectra of microcrystalline silicon involves the knowledge of a material parameter called the Raman emission cross-section ratio y. This value is still debated in the literature. In the present work, the determination of y has been carried out on the basis of quantitative analysis of medium-resolution transmission electron microscopy (TEM) micrographs performed on one layer deposited by very high frequency plasma enhanced chemical vapor deposition (VHF- PECVD) close to the amorphous/microcrystalline transition. Subsequent comparison of these data with the crystallinity as evaluated from measured Raman spectra yields a surprisingly high value of y = 1.7. This result is discussed in relation to previously published values (that range from 0.1 to 0.9). © 2006 Elsevier B.V. All rights reserved.
Christophe Ballif, Mathieu Gérard Boccard, Raphaël Monnard, Angela Nicole Fioretti
Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Xavier Niquille, Matthieu Despeisse, Gizem Nogay, Philipp Friedrich Hermann Löper, Philippe Wyss, Josua Andreas Stückelberger, Martin Ledinsky
Christophe Ballif, Bertrand Yves Paul Paviet-Salomon, Jonas Geissbühler, Matthieu Despeisse, Stefaan De Wolf, Andrea Tomasi, Martin Ledinsky