Publication

Thickness dependent loss function of Si with 0.14 eV energy resolution

2004
Journal paper

Abstract

The use of electron energy loss spectroscopy (EELS) in determining the electronic properties of Si and thickness dependent loss function of Si with 0.14 eV energy resolution were investigated. The dielectric response function was used to describe the interaction of a transmitted electron beam with the solid specimen. The specimen was oxidized in air for several days so that a thin amorphous SiO2 layer was formed covering both surfaces. It was observed that for fine structure investigations a high energy resolution of the electron source and the spectrometer were essential. The tails of the zero loss peak (ZLP) have also to be removed for extreme low loss spectroscopy.

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2004
Journal paper

Abstract

Official source

About this result

Ontological neighbourhood

Industrial and production engineering

Manufacturing engineering: Electron-beam technology

Related concepts (28)

Electron energy loss spectroscopy (EELS) is a form of electron microscopy in which a material is exposed to a beam of electrons with a known, narrow range of kinetic energies. Some of the electrons will undergo inelastic scattering, which means that they lose energy and have their paths slightly and randomly deflected. The amount of energy loss can be measured via an electron spectrometer and interpreted in terms of what caused the energy loss.

An electron microscope is a microscope that uses a beam of electrons as a source of illumination. They use electron optics that are analogous to the glass lenses of an optical light microscope. As the wavelength of an electron can be up to 100,000 times shorter than that of visible light, electron microscopes have a higher resolution of about 0.1 nm, which compares to about 200 nm for light microscopes.

Transmission electron microscopy (TEM) is a microscopy technique in which a beam of electrons is transmitted through a specimen to form an image. The specimen is most often an ultrathin section less than 100 nm thick or a suspension on a grid. An image is formed from the interaction of the electrons with the sample as the beam is transmitted through the specimen. The image is then magnified and focused onto an imaging device, such as a fluorescent screen, a layer of photographic film, or a sensor such as a scintillator attached to a charge-coupled device.

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Thickness dependent loss function of Si with 0.14 eV energy resolution

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