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New approach for SOI pixel sensor

Related publications (93)

First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology

Edoardo Charbon, Claudio Bruschini, Myung Jae Lee

We present the world's first backside-illuminated (BSI) single-photon avalanche diode (SPAD) based on standard silicon-on-insulator (SOI) complementary metal-oxide semiconductor (CMOS) technology. This SPAD achieves a good dark count rate (DCR) after backs ...

2019

A 512 x 512 SPAD Image Sensor With Integrated Gating for Widefield FLIM

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Arin Can Ülkü

In this paper, we report on SwissSPAD2, an image sensor with 512 x 512 photon-counting pixels, each comprising a single-photon avalanche diode (SPAD), a 1-b memory, and a gating mechanism capable of turning the SPAD ON and OFF, with a skew of 250 and 344 p ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Self-Heating Aware Design of ICs in Deep Sub-Micron FDSOI and Bulk Technologies

Can Baltaci

Bulk CMOS technologies left the semiconductor market to the novel device geometries such as FDSOI and FinFET below 30 nm, mainly due to their insufficient electrical characteristics arising from different physical limitations. These innovative solutions en ...

EPFL2018

Development of a monolithic near-field optomechanical system

Ryan Daniel Schilling

In the same year as Einstein's annus mirabilis, English engineer and physicist John Flemming patented the first rectifying diode, which he called the "Flemming valve". Einstein's work on the photoelectric effect would change our understanding of the nature ...

EPFL2018

Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

Mihai Adrian Ionescu, Fabien Patrick Wildhaber, Junrui Zhang, Erick Antonio Garcia Cordero, Johan Frédéric Longo, Hoël Maxime Guérin, Francesco Bellando

Wearable systems could offer noninvasive and real-time solutions for monitoring of biomarkers in human sweat as an alternative to blood testing. Recent studies have demonstrated that the concentration of certain biomarkers in sweat can be directly correlat ...

2018

A Design-oriented Charge-based Simplified Model for FDSOI MOSFETs

Christian Enz, Farzan Jazaeri, Alessandro Pezzotta, Louis Hutin

In this paper a design-oriented model for asymmetrical double-gate (ADG) MOSFETs is proposed. Including the back-gate effect into the original simplified EKV bulk model requires only one additional parameter to the existing four, and extends the simplified ...

2018

Variability of Low Frequency Noise and mismatch in enclosed-gate and standard nMOSFETs

Matthias Bucher, Mathieu Yves Hervé Coustans

Variability of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) is an important concern for many analog CMOS integrated circuits. In this paper, transistors with enclosed gate layout are examined and compared with standard layout transistors, wit ...

IEEE2017

On current transients in MoS2 Field Effect Transistors

Andras Kis, Dmitry Ovchinnikov

We present an experimental investigation of slow transients in the gate and drain currents of MoS2-based transistors. We focus on the measurement of both the gate and drain currents and, from the comparative analysis of the current transients, we conclude ...

Nature Publishing Group2017

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

Elison de Nazareth Matioli, Jun Ma

We present AlGaN/GaN nanostructured Schottky barrier diodes (SBDs) on silicon substrate with high breakdown voltage (V-BR) and low reverse leakage current (I-R), based on a hybrid of tri-anode and tri-gate architectures. The fabricated SBDs presented a sma ...

2017

Monolithic technology for silicon nanowires in high-topography architectures

Yusuf Leblebici, Mohammad Nasr Esfahani, Mustafa Yilmaz

Integration of silicon nanowires (Si NWs) in three-dimensional (3D) devices including integrated circuits (ICs) and microelectromechanical systems (MEMS) leads to enhanced functionality and performance in diverse applications. The immediate challenge to th ...

Elsevier2017

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