Semiconductor quantum-wires and nano-wires for optoelectronic applications
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InGaN/GaN heterostructure samples were grown by molecular beam epitaxy using ammonia as a nitrogen precursor. The growth of InGaN/GaN self-assembled quantum dots was monitored in situ by reflection high energy electron diffraction intensity oscillations. A ...
Quantitative analysis of high resolution electron microscopy image has been carried out to measure the indium distribution inside InGaN/GaN quantum well. The analyzed samples were nominally grown with 15% indium composition by molecular beam epitaxy with i ...
It is shown that both GaN and Ga0.8In0.2N quantum dots (QDs) can be grown by molecular beam epitaxy on silicon or sapphire substrates making use of the strain-induced two-dimensional (2D)-three dimensional (3D) growth mode occurring for mismatched material ...
In this paper, we present a systematic study of the effect of growth parameters on the structural and optical properties of InAs quantum dot (QD) grown under Stranski-Krastanov mode by molecular beam epitaxy. The dot density is significantly reduced from 1 ...
In the present paper, we address a review of group-III nitride quantum wells and quantum dots realized by molecular beam epitaxy (MBE) using ammonia as a nitrogen source. Some important features of the growth of nitrides by MBE using ammonia are pointed ou ...
High-efficiency top-emitting InGaAs/AlGaAs microcavity light-emitting diodes (MCLEDs) have been optimized and fabricated. The structures were grown using molecular beam epitaxy on GaAs substrates. They consist of a three-period Be-doped distributed Bragg r ...
Optical spectroscopy under varying temperature is used to investigate samples containing planes of self-assembled Ga1-xInxN quantum dots (0.15 < x < 0.20), embedded in a GaN matrix. The samples have been grown by molecular beam epitaxy on sapphire substrat ...
Group-III nitride quantum dots (QDs) are grown by molecular beam epitaxy. GaN/AIN QDs are used as a prototypical system for studying the interplay of the carrier localization and the built-in polarization field. The latter effect pushes the QD photolumines ...
Microcavity light emitting diodes (MCLEDs) present several interesting features compared to conventional LEDs such as narrow linewidth, improved directionality and high efficiency. We report here on MCLEDs with a top emitting geometry. The MCLED layers wer ...
We report on Raman scattering in hexagonal GaN quantum wells embedded in Al0.11Ga0.89N barriers, The six monolayers thick quantum wells, grown by molecular beam epitaxy, are deposited on a GaN buffer layer. Resonant enhancement of the Raman lines associate ...
