Photoluminescence and carrier dynamics in GaAs quantum wells
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We report on microscopic photoluminescence and photoluminescence excitation of thin Al0.3Ga0.7As/GaAs quantum wells grown on exactly oriented (001) GaAs substrates. The experiments are done at low temperature by selectively exciting a few mu m(2) of the sa ...
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We present a comparative study of time-integrated four-wave-mixing and femtosecond emission under resonant excitation on excitons in weakly disordered GaAs quantum wells. At highest exciton densities when dephasing dominates the spectral width (homogeneous ...
We investigate the exciton formation process from free carriers in a single GaAs quantum well. We focus on the formation processes assisted by emission and absorption of acoustic and optical phonons. The formation rates are evaluated and compared to the ex ...
We have investigated the intersubband scattering of electrons in GaAs quantum wells using luminescence up-conversion with 100-fs resolution. The decay time of the n=2 electron-to-heavy-hole transition (e,hh)(2) depends both on the excess energy of the char ...
A theoretical investigation of the exciton formation process from free carriers in a single GaAs/Al1-xGaxAs quantum well is presented. The mechanism for the formation processes is provided by the interaction of the electrons and holes with phonons. The con ...
Using luminescence upconversion with 100 fs resolution, we have investigated the intersubband scattering of electrons in GaAs quantum wells (QWs). The energy separations between the first and second confined electron subband (E(12)) were more or less than ...
Using femtosecond resonant luminescence, we have measured the intersubband scattering rate of electrons in wide GaAs quantum wells at very low excitation densities. Even when the spacing be tween the first two electron subbands is smaller than the LO phono ...
