Publication

Atomistic model of the 4H(0001)SiC-SiO2 interface: structural and electronic properties

Related publications (32)

About
Privacy
Disclaimer

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Atomistic model of the 4H(0001)SiC-SiO2 interface: structural and electronic properties

Graph Chatbot

Chat with Graph Search

Intercalation of H at the graphene/SiC(0001) interface: Structure and stability from first principles

Light Generation and Harvesting in a van der Waals Heterostructure

Accurate determination of charge transition levels of the As-As dimer defect at GaAs/oxide interfaces through hybrid functionals

Electronic and Structural Properties of the Ge/GeO2 Interface through Hybrid Functionals

First principles study of electronic and structural properties of the Ge/GeO2 interface

Charge transition levels of carbon-, oxygen-, and hydrogen-related defects at the SiC/SiO2 interface through hybrid functionals

Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

Investigation of Two-Dimensional Electron Gases with Angular Resolved Photoemission Spectroscopy

Band offsets at the Ge/GeO2 interface through hybrid density functionals

First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si-SiO2-HfO2 stack