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Optimization of Nanoelectronic Systems Reliability under Massive Defect Density Using Distributed R-Fold Modular Redundancy

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Robust Sparse Voting

Rachid Guerraoui, Youssef Allouah, Oscar Jean Olivier Villemaud, Le Nguyen Hoang

Many applications, such as content moderation and recommendation, require reviewing and scoring a large number of alternatives. Doing so robustly is however very challenging. Indeed, voters' inputs are inevitably sparse: most alternatives are only scored b ...

2024

Controlling DNA nanodevices with light-switchable buffers

Cristian Pezzato, Cesare Berton, Valentin Jean Périllat

Control over synthetic DNA-based nanodevices can be achieved with a variety of physical and chemical stimuli. Actuation with light, however, is as advantageous as difficult to implement without modifying DNA strands with photo-switchable groups. Herein, we ...

ROYAL SOC CHEMISTRY2023

Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Mirjana Dimitrievska

Growth approaches that limit the interface area between layers to nanoscale regions are emerging as a promising pathway to limit the interface defect formation due to mismatching lattice parameters or thermal expansion coefficient. Interfacial defect mitig ...

AMER CHEMICAL SOC2022

Graphene Confers Ultralow Friction on Nanogear Cogs

Roberto Guarino, Enrico Gnecco

Friction-induced energy dissipation impedes the performance of nanomechanical devices. Nevertheless, the application of graphene is known to modulate frictional dissipation by inducing local strain. This work reports on the nanomechanics of graphene confor ...

2021

Thermomechanical nanocutting of 2D materials using thermal scanning probe lithography

Jürgen Brugger, Giovanni Boero, Xia Liu, Ana Conde Rubio, Samuel Tobias Howell

The rapidly evolving field of 2D materials has developed a plethora of emerging micro/nano devices where atomically-thin materials play a fundamental role. In most cases, this implies the need of nanostructuring them, but due to their delicate nature, conv ...

2020

Ultrafast carrier dynamics in III-nitride nanostructures and LED quantum efficiency

Wei Liu

Since the seminal report about the first Candela-class-brightness InGaN blue light-emitting diodes (LEDs) by Shuji Nakamura et al. in 1994, III-nitride semiconductors have been one of the most important platforms for optoelectronic devices. The achieve ...

EPFL2019

Nanotechnology is regarded as the enabling technology of the 21st century. However, only a relatively small number of nano-enabled medical and healthcare products finally made their way to the market. There are several reasons why such innovative approache ...

ELSEVIER SCIENCE BV2018

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Atomically thin two-dimensional (2D) materials belonging to transition metal dichalcogenides, due to their physical and electrical properties, are an exceptional vector for the exploration of next-generation semiconductor devices. Among them, due to the po ...

2018

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Routing multiplexers based on pass-transistors or transmission gates are an essential components in many digital integrated circuits. However, whatever structure is employed, CMOS multiplexers have two major limitations: 1) their delay is linearly related ...

Ieee-Inst Electrical Electronics Engineers Inc2017

Robustness Analysis of Controllable-Polarity Silicon Nanowire Devices and Circuits

Hassan Ghasemzadeh Mohammadi

Substantial downscaling of the feature size in current CMOS technology has confronted digital designers with serious challenges including short channel effect and high amount of leakage power. To address these problems, emerging nano-devices, e.g., Silicon ...

EPFL2016