Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)
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GaN grown by three different methods (MOVPE, GSMBE and HVPE) have been studied using temperature (T) dependent reflectivity and photoluminescence (PL). Both non intentionally doped (MOVPE, GSMBE and HVPE), n- and p-doped samples (MOVPE and GSMBE) have been ...
Platinum silicide films are widely used in silicon devices for ohmic and Schottky contacts. It has been demonstrated in the recent years that Schottky barriers employing ultra-thin platinum silicide films (thickness < 10 nm) are useful for photodetection i ...
Contact potential difference (CPD) measurements using a Kelvin probe coupled with synchrotron radiation are used to investigate various aspects of the problem of surface photovoltage (SPV) induced by the synchrotron radiation at (110) and (100) GaAs surfac ...
The holographic recording characteristics of phenanthrenequinone- (PQ-) doped poly(methyl methacrylate) are investigated. The exposure sensitivity is characterized for single-hologram recording, and the il M/# is measured for samples as thick as 3 mm. Opti ...
White phosphorus is a very efficient trap for carbon radicals generated by white light photolysis of Barton PTOC esters using CH2Cl2-CS2 as solvent at 0 Deg under dry argon. Removal of the solvent mixt. and oxidn. with H2O2 in 1,2-dimethoxyethane provides ...
