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Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)

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III-V Nitride Semiconductors Deposited At Low Temperature For Photovoltaic Applications

Jonathan Emanuel Thomet

This thesis reports on the study and use of low temperature processes for the deposition of indium gallium nitride (InGaN) thin films in order to alleviate some of the present drawbacks of its monolitic deposition on silicon for photovoltaic applications. ...

EPFL2023

Domain generalization (DG) aims to learn a model from multiple training (i.e., source) domains that can generalize well to the unseen test (i.e., target) data coming from a different distribution. Single domain generalization (SingleDG) has recently emerge ...

IEEE COMPUTER SOC2023

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

Structure-property relationships and mixed conductivity in layered hybrid perovskites based on phenyl-derived spacers

Algirdas Ducinskas

Hybrid halide perovskites are currently one of the most studied semiconductors. However, due to poor intrinsic and extrinsic stability, further developments to commercialize devices based on hybrid halide perovskites are limited. Many different strategies ...

EPFL2022

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Elison de Nazareth Matioli, Luca Nela, Catherine Erine, Amirmohammad Miran Zadeh

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

2022

Development of microdevices for the in-plane thermoelectric characterization of deposited films

Stefano Mischler

Measuring the thermoelectric transport properties of a material is a prerequisite to determining its usefulness for application in waste heat recovery or cooling and the basis for devising improvement strategies. While well-established characterization met ...

ELSEVIER2021

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The present invention describes an imaging system that allows visualization of a wide range of samples both in terms of morphology and in terms of material (e.g. density distribution, varying chemical composition, or anything that induces a change of optic ...

2021

Broadband electrostatic force microscopy can be used to non-destructively image n-type and p-type dopant layers in silicon devices with a lateral resolution of 10 nm and a vertical resolution of 0.5 nm. Integrated circuits and certain silicon-based quantum ...

NATURE PUBLISHING GROUP2020

While the extant innovation literature has provided extensive evidence of the so-called "demand-pull" effect, the possible diverse impact of demand evolution on product vs process innovation activities has not been yet investigated. This paper develops a f ...

SPRINGER2020