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Lukasiewicz Fuzzy Logic Networks and Their Ultra Low Power Hardware Implementation

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Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600 degrees C) Electronics

Nicolas Grandjean, Jean-François Carlin, Lorenzo Lugani

Lattice matched 0.25-mu m gatelength InAlN/GaN high electron mobility transistors are realized in an ultrathin body mesa technology (50-nm AlN nucleation layer/50-nm GaN buffer) on sapphire. At room temperature, the maximum output current density is I-DS = ...

Ieee-Inst Electrical Electronics Engineers Inc2013

Conductance Switching and Many-Valued Logic in Porphyrin Assemblies

Nicola Marzari

We investigate quantum interference in the transport properties of porphyrin-based molecular devices, and are able to develop a minimal but qualitatively accurate model of conductance based on the maximally localized Wannier functions of just the isolated ...

Amer Chemical Soc2013

Low Leakage Normally-off Tri-gate GaN MISFET

Elison de Nazareth Matioli, Bin Lu

A new tri-gate normally-off GaN metal-insulator-semiconductor field effect transistor (MISFET) is presented in this paper. By using a three-dimensional gate structure with combination of a sub-micron gate recess, the new device achieves a very low off-stat ...

Ieee2012

Tri-Gate Normally-Off GaN Power MISFET

Elison de Nazareth Matioli, Bin Lu

We present a new normally-off GaN transistor-the tri-gate normally-off GaN metal-insulator-semiconductor field-effect transistor (MISFET). Due to the excellent channel control of a new 3-D gate structure, a breakdown voltage of 565 V has been achieved at a ...

Ieee-Inst Electrical Electronics Engineers Inc2012

Beyond Scaling

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

A Hall sensor microsystem with integrated voltage and current references for continuous sensitivity calibration

Maher Kayal, Marc Pastre, Andrea Ajbl

This paper presents a Hall sensor microsystem output and sensitivity calibration targeting low drift (

IEEE2012

Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

Helmuth Berger

We realized ambipolar field-effect transistors by coupling exfoliated thin flakes of tungsten disulfide (WS2) with an ionic liquid dielectric. The devices show ideal electrical characteristics, including very steep subthreshold slopes for both electrons an ...

Amer Chemical Soc2012

Process Variation and Leakage Power

Bahman Kheradmand Boroujeni

Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...

EPFL2011

Field-Effect Transistors Based on ZnO Nanowires

Daniel Dominik Kälblein

Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...

EPFL2011

Corner Effect and Local Volume Inversion in SiNW FETs

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis, Luca Selmi

In this paper, a quantitative study of the corner effect and of the local volume inversion on gate-all-around MOSFETs based on numerical simulations has been carried out; different angles and doping levels are compared, in order to understand the impact of ...

Institute of Electrical and Electronics Engineers2011