Photocurrent and photoconductance properties of a GaAs nanowire
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
The topic of this dissertation is embedded into the new-born field of inorganic nanowires. The research was focused on zinc oxide (ZnO) nanowires, in particular, which besides posing fundamental questions in physics, promise broad range of applications. Zn ...
GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm ...
The growth of GaAs nanowires by the gallium-assisted method with molecular beam epitaxy (MBE) is presented in this review article. The structure of the grown nanowires was investigated by means of scanning and transmission electron microscopy as well as Ra ...
In the past decades, III-nitride semiconductor compounds have attracted an increasing amount of interest due to their applications to blue-violet laser diodes and white light emitting diodes, or for their use as ultraviolet emitting devices for biomedical ...
InAs columnar quantum dash (CQDash) structures on (100) InP have been realized by gas source molecular beam epitaxy for stacking numbers of up to 24. Laser devices show low threshold current densities between 0.73 and 3.5 kA/cm(2), dependent on the CQDash ...
Aluminum and gold nanowires were fabricated using 100 mm stencil wafers containing nanoslits fabricated with a focused ion beam. The stencils were aligned and the nanowires deposited on a substrate with predefined electrical pads. The morphology and resist ...
We report on the growth by molecular-beam epitaxy on 2 in. sapphire substrates of crack-free AlxGa1-xN/GaN distributed Bragg reflectors (DBRs) with high-Al composition (x=0.5). This is achieved by introducing a thick AlN interlayer and strain mediating Aly ...
Self-assembled quantum-dots (QDs) represent a distributed ensemble of zero dimensional structures, each presenting a near-singular density of states. The QD size, shape, areal density and optical properties depend on growth parameters, such as growth tempe ...
In-depth optical spectroscopic studies of single polar GaN/AlN quantum dots (QDs) grown by molecular beam epitaxy are carried out by means of low-temperature microphotoluminescence. Luminescence linewidths as low as 700 mu eV are obtained allowing thorough ...
Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 x 10(4), a ...