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The high-mobility bended n-channel silicon nanowire transistor

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The high-mobility bended n-channel silicon nanowire transistor

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Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

Design and fabrication of suspended-gate MOSFETs for MEMS resonator, switch and memory applications

Gate-all-around silicon nanowires for hybrid single electron transistor/CMOS applications

Ultra-thin nanograin polysilicon devices for hybrid CMOS-NANO integrated circuits

Bended gate-all-around nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

A hybrid CMOS-SET co-fabrication platform using nano-grain polysilicon wires

Hybrid CMOS-SET devices and circuits

Gate-all-around silicon nanowires for hybrid single electron transistor/CMOS applications

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Ultra-thin nanograin polysilicon devices for hybrid CMOS-NANO integrated circuits

Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon

Design and fabrication of suspended-gate MOSFETs for MEMS resonator, switch and memory applications

Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector

A hybrid CMOS-SET co-fabrication platform using nano-grain polysilicon wires

Bended gate-all-around nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

Hybrid CMOS-SET devices and circuits