Publication
In this paper, we have used the partially depleted SOI MOSFET to measure the intensity of tight. The charge pumping technique was used to get rid of the photogenerated carriers in the body in an attempt to keep the drain current constant. Using this technique flux densities as low as 2mW/m(2) were measured.
Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando, Carlotta Gastaldi
Jean-Michel Sallese, Farzan Jazaeri, Matthias Bucher