Publication
It is shown that Te can be used as a surfactant for the growth of highly strained InxGa1-xAs on GaAs(001). As observed by reflection high-energy electron diffraction analysis during growth, adsorption of Te on the GaAs surface prior to the growth of InxGa1-xAs drastically increases the layer thickness which can be grown in a two-dimensional layer-by-layer fashion. In analogy with the behavior of As and Sb as surfactant in the growth of Si/Ge [Copel, Reuter, Kaxiras, and Tromp, Phys. Rev. Lett. 63, 632 (1989)] Te is only slightly incorporated in the growing layer and floats at the surface.
Christian Leinenbach, Elyas Ghafoori, Irene Ferretto, Mahbod Golrang, Mahshid Memarian
Fabrizio Carbone, Alexey Sapozhnik, Phoebe Marie Tengdin, Giovanni Maria Vanacore, Ivan Madan, Ido Kaminer, Simone Gargiulo, Francesco Barantani, Veronica Leccese