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EXTENSION OF THE LAYER-BY-LAYER GROWTH REGIME OF INXGA1-XAS ON GAAS (001)

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EXTENSION OF THE LAYER-BY-LAYER GROWTH REGIME OF INXGA1-XAS ON GAAS (001)

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Strong carrier localization in GaInN/GaN quantum dots grown by molecular beam epitaxy

Strain and surface morphology in lattice-matched ZnSe/InxGa1-xAs heterostructures

On the lateral decomposition, growth mode and defect nucleation in the InxGa1-xAs channel of HEMT devices depending on the growth temperature, well thickness and mismatch

Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells

Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions

Indium surface segregation during chemical beam epitaxy of Ga1-xInxAs/GaAs and Ga1-xInxP/GaAs heterostructures

Monte Carlo simulation of In surface segregation during the growth of InxGa1-xAs on GaAs(001)

Growth temperature dependence of the interfacet migration in chemical beam epitaxy of InP on non-planar substrates

MONOLAYER THICKNESS CONTROL OF INXGA1-XAS/GAAS QUANTUM-WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

HIGH-SPEED INP/GAINAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS GROWN BY CHEMICAL BEAM EPITAXY