The purpose of this work is to compare for thin film analysis, atomic force microscopy, a recently emerging tool, with well-established nuclear analysis techniques. The comparison is conducted using typical samples of InAs/GaAs heterostructures grown by molecular beam epitaxy under standard conditions as well as samples grown with Te as surfactant. After a brief overview of the different techniques, the obtained results are discussed with an emphasis on the limits and the complementarity of these techniques.
Nicolas Grandjean, Denis Martin, Sebastian Pascal Tamariz Kaufmann
Nicolas Grandjean, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Marco Malinverni, Marco Rossetti, Jean-Michel Jacques Lamy, Denis Martin, Lise Lahourcade