Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers
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We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local ...
Periodic polarity (PePo) GaN films are grown by molecular-beam epitaxy. A high Mg doping is used to reverse the film polarity from Ga to N. An etching step is then performed to define the PePo pattern. Ultrasharp inversion domain boundaries between Ga- and ...
This PhD thesis describes the experimental study of wurtzite III-nitride semiconductors grown on non-polar crystal orientations, namely (1120) a- and (1010) m-planes. Hindered by poor material quality, they were not as extensively investigated as the polar ...
GaN epilayers are grown on (111) oriented single crystal diamond substrate by ammonia-source molecular beam epitaxy. Each step of the growth is monitored in situ by reflection high energy electron diffraction. It is found that a two-dimensional epitaxial w ...
Gallium nitride (GaN) is one of the most interesting materials for devices applications such as blue light emitting diodes, laser diodes and high power and high temperature electronic applications, because of its large band gap (3.39 eV). Several growth te ...
We report on solar-blind metal-semiconductor-metal (MSM) detectors fabricated on stacks of (AI,Ga)N layers with different Al mole fraction. These structures were grown by molecular beam epitaxy on sapphire substrates to allow backside illumination and a lo ...
A method for including an oxide region in a layered structure being grown epitaxially on a substrate, comprising the steps of epitaxially forming a Group III-nitride precursor layer, and selectively oxidizing the precursor layer, thereby forming the oxide ...
The reduction of the tensile stress contained in GaN layers grown oil sapphire by metalorganic vapor phase epitaxy (MOVPE) is achieved using a low density of initial GaN crystallites. The template layers exhibit a significant reduction in dislocation densi ...
The control of the GaN-polarity is promising in view of achieving periodic polarity structures for non-linear optics. It is shown here that the polarity of GaN(0 0 0 1) epilayers can be reversed from Ga to N using a high Mg doping during molecular beam epi ...
M-plane GaN epilayers have been directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy using a low temperature GaN nucleation layer. The m-plane GaN surface is optically smooth and mirror-like, with rms roughness similar to 2.0 nm (5 ...
