Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells
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We report the growth behaviour of InP, InGaAs and InGaAsP on non-planar InP substrates where ridges were formed with (111)A, (211)A, (111)B and (551BAR) sidewall planes. All three materials grow uniformly on the whole patterned surface with (111)A and (211 ...
GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering ...
In order to delay the occurrence of the 2D-3D growth mode transition in highly strained InxGa1-xAs epitaxial layers grown on GaAs (001) by molecular beam epitaxy, the mass transport at the surface should be reduced. This can be achieved by increasing the g ...
Hall electrical properties measured by the van der Pauw method and low-temperature photoluminescence (77 K PL) spectra of pseudomorphic GaAs/InyGa1-yAs/AlGaAs modulation-doped field-effect transistor-type heterostructures grown by molecular-beam epitaxy we ...
We report a cathodoluminescence (CL) study at helium temperature of oval defects on quantum well (QW) structures grown by molecular beam epitaxy (MBE). We collected the luminescence emitted both from the facet shaped defect and from the defect free growth ...
Photoluminescence (PL), reflectivity and thermally-detected optical absorption (TDOA) experiments have been carried out, at liquid helium temperatures, On In0.35Ga0.65As/GaAs quantum wells (QWs) with different thicknesses of 4, 6, 8 and 10 monolayers (MLs) ...
The molecular-beam epitaxial growth conditions of (N + 1)(InAs)m/N(GaAs)n short period superlattices (SPSs) on GaAs substrates have been optimized. Hall electrical properties measured by the van der Pauw method were compared to low-temperature photolumines ...
We studied the influence of the indium composition y, growth temperature T(s) and InGaAs quantum-well channel thickness d(ch) on the 300 and 77 K Hall electrical properties of pseudomorphic modulation doped field effect transistor (MODFET)-type heterostruc ...
We studied the influence of the growth temperature Ts and of the InGaAs quantum-well channel thickness dch on the 300 and 77 K Hall electrical properties of pseudomorphic MODFET-type heterostructures grown by molecular-beam epitaxy (MBE). In agreement with ...
GaAs/AlxGa1-xAs multiple-quantum-well structures with identical well thicknesses (almost-equal-to 119 angstrom) but with different Al contents x in the barrier (x almost-equal-to 0. 1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy. We report the c ...
