Publication

GaN/AlxGa1-xN quantum wells grown by molecular beam epitaxy with thickness control at the monolayer scale

Related publications (46)

Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Gwénolé Jean Jacopin, Gediminas Liaugaudas

We report a systematic study of the photoluminescence (PL) properties of a series of nearly lattice-matched (LM) GaN/(Al,In)N single quantum well (SQW) samples, with well thickness ranging from 1.5 to 5 nm, grown by metalorganic vapor phase epitaxy. Temper ...

Amer Inst Physics2016

Measurements of the Electric Field of Zero-Point Optical Phonons in GaAs Quantum Wells Support the Urbach Rule for Zero-Temperature Lifetime Broadening

Elyahou Kapon, Alok Rudra

We study a specific type of lifetime broadening resulting in the well-known exponential "Urbach tail" density of states within the energy gap of an insulator. After establishing the frequency and temperature dependence of the Urbach edge in GaAs quantum we ...

Amer Physical Soc2015

Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green

Nicolas Grandjean, Denis Martin, Nils Asmus Kristian Kaufmann

Transmission electron microscopy and photoluminescence investigations have been carried out on a series of quantum wells grown by molecular beam epitaxy and metal organic vapour phase epitaxy. In both cases, the emission wavelength and the peak width agree ...

2011

Semiconductor quantum-wires and nano-wires for optoelectronic applications

Elyahou Kapon, Alok Rudra, Susanna Palmgren

Exciton transfer between two parallel GaAs V-groove quantum wires (QWRs) or two planar quantum wells (QWs) separated by AlGaAs barriers ranging from 5.5 nm to 20 nm thickness is studied by photoluminescence (PL) and PL excitation (PLE) spectroscopy. It is ...

2009

Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions

Nicolas Grandjean

High quality GaN/AlGaN multiquantum well (QW) structures were grown by ammonia molecular beam epitaxy along the (0001) polar and (11 (2) over bar0) nonpolar directions. Each sample contains three QWs with thicknesses of 2, 3, and 4 nm as well as 10 nm Al0. ...

2009

In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on m- and r-plane Sapphire Substrates

Nicolas Grandjean, Denis Martin, Tiankai Zhu

The in-plane polarities of GaN and ZnO non-polar films deposited on r- and m-sapphire are compared. The polarity is unique on r-sapphire and mixed on m-sapphire because the direction on the substrate surface parallel to the wurztite c-direction is polar in ...

2009

Inhomogeneous broadening of AlxGa1-xN/GaN quantum wells

Nicolas Grandjean

We report a low-temperature photoluminescence study of a series of AlxGal-xN/GaN quantum wells of various widths L and with x ranging from 0.11 to 0.25, grown by molecular beam epitaxy on silicon (111) substrates. Such quantum wells are subject to an impor ...

2005

Progress in AlInN-GaN Bragg reflectors: Application to a microcavity light emitting diode

Jean-François Carlin, Marc Ilegems, Julien Dorsaz

We report on the progress in the growth of highly reflective AlInN-GaN distributed Bragg reflectors deposited by metalorganic vapor phase epitaxy. Al1-xInxN layers with an In content around x similar to 0.17 are lattice-matched to GaN, thus avoiding strain ...

2005

Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

Nicolas Grandjean

We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local ...

2004

InGaN/GaN resonant-cavity LED including an AlInN/GaN bragg mirror

Jean-François Carlin, Marc Ilegems, Julien Dorsaz

We report on the growth by metalorganic vapor phase epitaxy of a InGaN/GaN resonant-cavity light emitting diode (RCLED) emitting at 454 nm and incorporating a 12-pair Al0.82In0.18N/GaN distributed Bragg reflector as bottom mirror. A(1-x)In(x)N layers with ...

2004

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