Publication

Band edge versus deep luminescence of InxGa1-xN layers grown by molecular beam epitaxy

Nicolas Grandjean
1998
Journal paper

Abstract

InxGa1-xN (0

Official source

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Band edge versus deep luminescence of InxGa1-xN layers grown by molecular beam epitaxy

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Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy