Dynamics of excitons in GaN-AlGaN MQWs with varying depths, thicknesses and barrier widths
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The local In distribution in InGaN quantum wells was measured in samples which were grown by metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) varying systematically the metal-flux ratio and the growth rate. The composition analyses ...
We report on the growth by metalorganic vapor phase epitaxy of a InGaN/GaN resonant-cavity light emitting diode (RCLED) emitting at 454 nm and incorporating a 12-pair Al0.82In0.18N/GaN distributed Bragg reflector as bottom mirror. A(1-x)In(x)N layers with ...
Metal-semiconductor-metal detectors have been fabricated based on AlGaN grown on Si by molecular beam epitaxy. Field distribution and collection efficiency were studied with the ion beam induced charge collection method. The results were explained by numer ...
Solar blind metal-semiconductor-metal detectors have been fabricated based on AlGaN grown on Si by molecular-beam epitaxy. Submicron finger spacings were obtained by electron-beam lithography, and allowed us to demonstrate a significant improvement of the ...
Thermally detected optical absorption (TDOA) and photoluminescence experiments were carried out on InGaN/GaN multi-quantum well (MQW) structures grown by molecular beam epitaxy on (0001) sapphire substrates. The absorption coefficient of the QW was extract ...
Continuous-wave and time-resolved optical spectroscopy is used to examine a variety of InGaN/GaN quantum-well and quantum-box samples. grown by molecular beam epitaxy. The results are analyzed in order to clarify the respective influences of electric field ...
InGaN/GaN quantum wells (QWs) were grown by molecular-beam epitaxy on c-plane sapphire substrates. The growth of InGaN is carried out at 550 degrees C with a large V/III ratio to counteract the low efficiency of NH3 at that temperature and to promote the t ...
GaN epilayers and GaN/AlGaN quantum wells (QWs) were grown by molecular beam epitaxy on GaN(0001) single crystal substrates. Transmission electron microscopy (TEM) was used to assess the crystal quality of the homoepitaxial layers. A dislocation density of ...
GaInN/GaN quantum dots have been grown by molecular beam epitaxy on sapphire substrates. By changing the size and composition of the dots, the emission energy can be tuned over the entire visible spectrum. We present time-resolved photoluminescence obtaine ...
InGaN/GaN single quantum wells (SQWs) are grown by molecular beam epitaxy using ammonia as a nitrogen precursor. The InGaN material quality is optimized through the photoluminescence (PL) properties. It is found that the growth temperature is critical for ...
