GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range
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This thesis deals with the monolithic integration of long wavelength (1.3-1.55 µm) p-i-n photodiodes with HEMT field effect transistors for the realization of wide bandwidth OEIC receivers for lightwave communication systems. Part of this work was carried ...
InGaN/GaN self-assembled quantum dots (QDs) were obtained by molecular beam epitaxy making use of the Stranski-Krastanov growth mode. Room-temperature photoluminescence (PL) energy of QDs was observed from 2.6 to 3.1 eV depending on the dot size. PL linewi ...
Microcavity light-emitting diodes (MCLEDs) with top-emitting geometry have been grown by molecular beam epitaxy on GaAs and Si substrates. External quantum efficiencies of up to 10% were obtained for 420 x 420 mu m(2) homoepitaxial devices. The efficiency ...
When a growth interruption is applied to the top interface of a nominally 3 monolayers (ML) thick InAs quantum well (QW), grown on an InP substrate, the InAs layer relaxes by formation of three-dimensional (3D) islands. The emission from the QW is split in ...
Microcavity light emitting diodes (MCLEDs) present several interesting features compared to conventional LEDs such as narrow linewidth, improved directionality and high efficiency. We report here on MCLEDs with a top emitting geometry. The MCLED layers wer ...
Semiconductor quantum wires (QWRs) are promising structures for optoelectronics applications, since they can provide quantum confinement for charge carriers in two dimensions. The advantage that they offer over conventional quantum wells (QWs) is due to th ...
Strained In0.35Ga0.65As/GaAs quantum wells of various thicknesses (6-16 monolayers) obtained by molecular beam epitaxy at 400 degrees C were studied by optical pumping techniques at 4 K. Improved quantum well optical properties, due to significant increase ...
GaN/AlxGa1-xN quantum wells (QWs) are grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates. Both the Al composition and the well thickness are determined in situ from reflection high-energy electron diffraction intensity oscillations. It is ...
Dissocn. efficiencies for excitation of the repulsive A 1P state of HCl were recorded in Xe, Kr, and Ar matrixes for photon energies between 5 and 10 eV from the content of dissocn. products and quantum efficiencies were derived with the absorption spectra ...
We present recent results of the study of surface properties and quantum efficiency (QE) of CsI photocathodes prepared on various substrates. Microanalysis methods provide laterally resolved surface morphology and chemical composition of the photoemissive ...