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Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum

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Fermionic wave functions from neural-network constrained hidden states

Giuseppe Carleo

We introduce a systematically improvable family of variational wave functions for the simulation of strongly correlated fermionic systems. This family consists of Slater determinants in an augmented Hilbert space involving “hidden” additional fermionic deg ...

2022

Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

EPFL2020

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Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for solid-state lighting. They exhibit impressive figures of merit like an internal quantum efficiency close to 100%. This value is intriguing when considering the high ...

AMER INST PHYSICS2018

Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Denis Martin, Gwénolé Jean Jacopin, Camille Haller

The insertion of an InGaN underlayer (UL) is known to strongly improve the performance of InGaN/GaN quantum well (QW) based blue light emitting diodes (LEDs). However, the actual physical mechanism responsible for it is still unclear. We thus conduct a sys ...

American Institute of Physics2017

Ca as an unintentional impurity has been investigated in III-nitride layers grown by molecular beam epitaxy (MBE). It is found that Ca originates from the substrate surface, even if careful cleaning and rinsing procedures are applied. The initial Ca surfac ...

Amer Inst Physics2016

We report on the exciton propagation in polar (Al,Ga)N/GaN quantum wells over several micrometers and up to room temperature. The key ingredient to achieve this result is the crystalline quality of GaN quantum wells grown on GaN substrate that limits nonra ...

Amer Physical Soc2016

Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue light-emitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of ...

EPFL2015

Optical and transport properties of GaN/(Al,Ga)N heterostructures in prospect of infrared unipolar devices

Etienne François Olivier Giraud

Over the past decade, a growing interest appeared for III-nitride semiconductors, in view of their potential applications in intersubband (ISB) devices. If these materials are nowadays famous, particularly for having revolutionized domestic lighting thanks ...

EPFL2015

Physics of the Ultrafast Dynamics of Excitons in GaN Nanostructures

Pierre Michel Corfdir

For more than fifteen years, III-nitrides have become the materials of choice for the realization of optoelectronics devices operating in the visible-UV spectral range. Yet, while nitride-based technology has truly exploded, the structural quality of this ...

EPFL2011

Quantum confinement dependence of the energy splitting and recombination dynamics of A and B excitons in a GaN/AlGaN quantum well

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Dobri Simeonov, Massimo Gurioli

We report the observation of well-resolved A and B excitonic resonances in the reflectivity spectra of a wedged GaN/AlGaN quantum well (QW) with 5% Al content in the barriers for different well thicknesses. For the thicker well cases, the energy splitting ...

2009