Optical properties of self-assembled InGaN/GaN quantum dots
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...
We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local ...
This thesis presents an experimental study of the energy and time-resolved optical response of chemically prepared CdSe nanoparticles with different sizes, shapes (dots, rods, and tetrapods), and lattice structures (wurtzite and zinc blende). The first par ...
Microphotoluminescence (mu-PL) experiment has been performed on a structure with InGaAs/GaAs epitaxial quantum rods (quantum dots with the aspect ratio as high as 4.1) grown by depositing short-period InAs/GaAs superlattice by molecular beam epitaxy on GaA ...
The influence of the basic growth parameters (growth temperature, V/III ratio and growth rate) on the surface morphology of AIN grown by molecular beam epitaxy on sapphire (0 0 0 1) substrate is reported. Optimized-growth conditions lead to a significant d ...
We demonstrate the feasibility and flexibility of artificial shape engineering of epitaxial semiconductor nanostructures. Novel nanostructures including InGaAs quantum rods (QRs), nanocandles, and quantum dots (QDs)-in-rods were realized on a GaAs substrat ...
Silicon oxide films containing CdS quantum dots have been deposited on glass substrates by a sol–gel dip-coating process. Hereby the CdS nanocrystals are grown during the thermal annealing step following the dip-coating procedure. Total hemispherical trans ...
We present ultrafast pump-probe studies on chem. prepd. CdSe nanocrystals. Upon pulsed optical excitation we find pronounced oscillations, indicating strong coupling to a LO phonon mode. From the polarization dependence of the signal addnl. information abo ...
In-depth optical spectroscopic studies of single polar GaN/AlN quantum dots (QDs) grown by molecular beam epitaxy are carried out by means of low-temperature microphotoluminescence. Luminescence linewidths as low as 700 mu eV are obtained allowing thorough ...
GaN/AlN quantum dots grown by molecular beam epitaxy either on silicon (111), sapphire or 6H-SiC (0001) substrate have been investigated using photoluminescence, cathodoluminescence, Fourier transform infrared spectroscopy and attenuated total reflection s ...
