Surface morphology of AlN and size dispersion of GaN quantum dots
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Thermally detected optical absorption measurements have been performed at liquid helium temperature in order to study the effects of In segregation on the optical properties of InxGa1-xAs/GaAs quantum wells grown by molecular-beam epitaxy under various gro ...
M. thermoautotrophicum was grown on a defined mineral salts medium under strictly anaerobic conditions with H2 and CO2 as the sole energy and C sources, resp. The cultivation medium was optimized with respect to non-org. components, including Se(IV), W(VI) ...
Photoluminescence (PL), reflectivity and thermally-detected optical absorption (TDOA) experiments have been carried out, at liquid helium temperatures, On In0.35Ga0.65As/GaAs quantum wells (QWs) with different thicknesses of 4, 6, 8 and 10 monolayers (MLs) ...
When InP is grown by chemical beam epitaxy on substrates patterned with ridges oriented along [110] with (111)B sidewall planes, the migration of In species on the surface changes direction with growth temperature. The movement is from the ridge to the val ...
We report the growth behaviour of InP, InGaAs and InGaAsP on non-planar InP substrates where ridges were formed with (111)A, (211)A, (111)B and (551BAR) sidewall planes. All three materials grow uniformly on the whole patterned surface with (111)A and (211 ...
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M. thermoautotrophicum was grown on a defined mineral salts medium under strictly anaerobic conditions with H2 and CO2 as the sole energy and C source, resp. The cultivation medium was optimized with respect to inorg. components, including Se(IV), W(VI), N ...
We studied the formation of buried heterostructures obtained in a single growth step over nonplanar substrates patterned with ridges. When the ridge dimensions are large enough, the growth on the mesa top is similar to that on a planar substrate. In contra ...
The growth of GaN and InxGa1-xN on c-plane sapphire substrates was carried out by molecular beam epitaxy using NH3. bl situ reflection high-energy electron diffraction (RHEED) was used to monitor the growth process. Oscillations of the specular beam intens ...
