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Inhomogeneous broadening of AlxGa1-xN/GaN quantum wells

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Inhomogeneous broadening of AlxGa1-xN/GaN quantum wells

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Low Threshold 1.55 µm Wavelength InAsP/InGaAsP Strained Multi-Quantum Well Laser Diode Grown by Chemical Beam Epitaxy

Optical stark effect and coherent gain of excitons in a semiconductor microcavity

Evidence of a blue shift in near surface ultra thin InAs/InP island like quantum wells

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