The dual wavelength Bi-vertical cavity surface-emitting laser
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The results obtained from luminescence measurements made on one-dimensional optical amplifiers are reviewed. The investigated samples are GaAs/(Ga, Al)As waveguiding structures containing a multiple quantum well structure as active element. The experimenta ...
Brillouin gain spectrum measurements in fibres are presented, where a single source is used to generate the pump and probe signals, giving highly reliable results. ...
We investigate, experimentally and theoretically, the optical amplification and its saturation in a mirrorless semicondctor quantum well laser. We optically excite a narrow stripe of variable length and measure the profiles of spontaneous and stimulated lu ...
We report the experimental observation of optical bistable switching in a combined distributed-feedback/Fabry-Perot structure. The sample had a high switching contrast with almost zero reflectivity in the on-state. A turnoff time as short as 4 ns was measu ...
The influence of coherent optical pumping in semiconductor lasers is investigated theoretically. In particular the mathematical conditions under which an optically pumped system behaves like an electrically (incoherently) pumped system are derived. We show ...
Optical pumping of long-lived quantum states is used to identify groups of ions in phase space and follow their transport. The principles and variants of a novel diagnostic method, as well as new physical aspects and applications, including space-dependent ...
The paper describes gain measurements in InGaAs/InGaAsP multiquantum-well lasers at 1.55-mu-m derived from the spontaneous emission under current injection. The gain spectrum in a broad-area laser device is determined from the spontaneous emission spectrum ...
Laser generation at 4.96 mm was achieved on the v = 2 -> v = 1 transition of 13C18O dild. in N2 crystals. Conversion efficiencies of 10-20% and stimulated emission cross-sections of ~10-15-10-13 cm2 are reported. [on SciFinder (R)] ...
We used optical pumping by the Vanderbilt free-electron laser and the technique of internal photoemission to measure with high accuracy the conduction-band discontinuity of semiconductor heterojunction interfaces. The experiment is the first application to ...
Optically excited (Fa, In, As, P) film lasers at 1. 3 and 1. 5 mu m have been investigated. The lasers showed single-mode emission and a tuning range of up to 160 nm. The laser threshold P//t and the differential quantum efficiency eta //D have been invest ...