Impact of inhomogeneous excitonic broadening on the strong exciton-photon coupling in quantum well nitride microcavities
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Room-temperature photoreflectance spectroscopy is performed on a series of GaN-AlGaN quantum wells grown by molecular beam epitaxy. We show that the potentialities of this powerful investigation method previously demonstrated on many low-dimensional system ...
AlGaN/GaN quantum well (QWs) were grown on (0001) sapphire substrates by molecular beam epitaxy (MBE) using ammonia as nitrogen precursor. The Al composition in the barriers was varied between 8 and 27 % and the well thickness from 4 to 17 monolayers (MLs, ...
Previous experimental studies have allowed us to observe peculiar localization effects of excitons in GaN/AlGaN quantum wells grown by MBE, as well as efficient nonradiative inter-well carrier transfers. In this work, we use the envelope-function approxima ...
We report on the epitaxial growth of high quality GaN films on Si(111) substrates by molecular beam epitaxy using ammonia. The surface morphology and crystallinity of thick undoped GaN films are characterized by reflection high-energy electron diffraction ...
We report on Raman scattering experiments performed on GaN-AlGaN quantum well structures, using various ultraviolet excitations. Under near resonant conditions we observe an important enhancement of the multi-LO phonon scattering in the wells or in the bar ...
GaN/InGaN heterostructures were grown by molecular beam epitaxy on sapphire (0001). The photoluminescence (PL) of InGaN/GaN quantum wells rapidly vanishes when the temperature increases from 10 to 100 K and is totally quenched above 150 K. This is the cons ...
Room-temperature photoreflectance spectroscopy is performed on a series of GaN-AlGaN quantum wells grown by molecular beam epitaxy. We show that the potentialities of this powerful investigation method previously demonstrated to many low-dimensional system ...
Quenching of the exciton luminescence of GaN epitaxial films and GaN/AlGaN quantum wells in an electric field is observed and attributed to impact ionization of excitonic states by hot electrons. It is found that impurity scattering rules the momentum rela ...
