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Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes

Related publications (35)

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Electron Emission Regimes of Planar Nano Vacuum Emitters

Yujia Yang, Alberto Nardi, Marco Turchetti

Recent advancements in nanofabrication have enabled the creation of vacuum electronic devices with nanoscale free-space gaps. These nanoelectronic devices promise the benefits of cold-field emission and transport through free space, such as high nonlineari ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Cartesian robot gripper

The purpose of this semester project is to move in 3D space the gripper to grab an object, move it and release it. To do so a cartesian 3D printer will be used to move the gripper. Some modifications needs to be done in order to install the gripper at the ...

2022

Adaptive Body Biasing in Strong Body Factor Technologies

Thomas Christoph Müller

With the advent of intelligent sensor nodes in everyday life, low power aspects of system design become more and more important. Adaptive body biasing is a promising methodology to achieve dynamic adaptation of the tradeoff between performance and energy b ...

EPFL2021

On-Chip Fully Integrated Field Emission Arrays for High-Voltage MEMS Applications

Vivek Subramanian

Vacuum-sealed fully integrated diode and triode field emission arrays based on Ti Spindt-type field emitters have been developed in a scalable, CMOS-compatible process directly on Si. Diode characterization in air demonstrates effective vacuum sealing and ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Nicolas Grandjean, Denis Martin, Hironori Okumura

Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 10 19 cm(-3) range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.2 ...

Amer Inst Physics2016

III-V Nanowire Hetero-junction Tunnel FETs integrated on Si

Davide Cutaia

In the last decade the power consumption of electronic devices has increased for both static and active components. Following the Dennard's scaling rule, as long as the transistor sizes are reduced then the supply voltage (VDD) can also be scaled in order ...

EPFL2016

Josephson Tunneling at the Atomic Scale

Berthold Jäck

The aim of this thesis is to characterize the properties of a Josephson junction in a Scanning Tunneling Microscope (STM) at millikelvin temperatures and to implement Josephson STM (JSTM) as a versatile probe at the atomic scale. To this end we investigate ...

EPFL2015

Results of the test of a pair of 20 kA HTS currents leads

Pierluigi Bruzzone, Rainer Wesche

A new series connected 25 T hybrid magnet system is being set up by the Helmholtz Zentrum Berlin (HZB) for neutron scattering experiments. CRPP has designed and manufactured a pair of 20 kA current leads for the powering of the outer superconducting coils ...

Iop Publishing Ltd2014

Results of the test of a pair of 20 kA HTS current leads

Pierluigi Bruzzone, Rainer Wesche

2013

Power Compensation Approach and Double Frame Control for Grid Connected Converters

Alfred Rufer, Daniel Siemaszko

The handling of weak networks with asymmetric disturbances implies the accurate handling of the second harmonic component appearing under unbalanced networks. This paper proposes a two-step approach using classic vector control for operating the current co ...

Ieee2013