Narrow UV emission from homogeneous GaN/AlGaN quantum wells
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Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local ...
GaInN/GaN heterostructures have been grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The growth of Ga1-xInxN (x > 12%) alloy has been extensively studied. At low V/III ratio, the growth undergoes a Stranski-Krastanov transition giving ...
GaN and InGaN layers are grown by molecular beam epitaxy using ammonia as nitrogen precursor. The lattice mismatch between InN and GaN is very large and a Stranski-Krastanov (SK) growth mode transition can occur above a critical In composition. However, ch ...
The lack of appropriate substrates has delayed the realisation of devices based on III-nitrides. Currently, the heteroepitaxial growth of GaN by metal organic vapour phase epitaxy (MOVPE) produces GaN layers which, despite huge densities of dislocations, a ...
GaN/InGaN heterostructures were grown by molecular beam epitaxy on sapphire (0001). The photoluminescence (PL) of InGaN/GaN quantum wells rapidly vanishes when the temperature increases from 10 to 100 K and is totally quenched above 150 K. This is the cons ...
GaInN/GaN quantum dots (QDs) are grown by molecular beam epitaxy making use of the Stranski-Krastanov growth regime. III Situ scanning tunneling microscopy (STM) evidences the formation of three-dimensional GaInN islands. An island density as high as 10(12 ...
It is shown that in GaN/AlN multiple quantum wells (MQWs), strain is a critical parameter for achieving short-wavelength intersubband transitions (ISBTs). This is investigated by comparing GaN/AlN MQWs grown by metal organic vapor phase epitaxy on either A ...
We report on a dramatic improvement of the optical and structural properties of AlN/GaN multiple quantum wells (MQWs) grown by metal-organic vapor-phase epitaxy using indium as a surfactant. This improvement is observed using photoluminescence as well as x ...
InGaN/GaN heterostructure samples were grown by molecular beam epitaxy using ammonia as a nitrogen precursor. The growth of InGaN/GaN self-assembled quantum dots was monitored in situ by reflection high energy electron diffraction intensity oscillations. A ...
