Publication

Growth mode induced carrier localization in InGaN/GaN quantum wells

Related publications (38)

An Opportunistic Reconfiguration Strategy for Environmentally Powered Devices

Giovanni De Micheli, Alexandru Emilian Susu

Environmental energy is becoming a feasible alternative to traditional energy sources for ultra low-power devices such as sensor nodes and smart watches. Moreover, the increas- ing need for exibility and recon gurability of such devices makes its energy ma ...
2006

Préparation et caractérisation de nanoparticules bimétalliques (Pt-Au) sur un substrat en diamant dopé au bore

Bahaa El Roustom

Using petrol as a main source of energy, during the 20th century, has caused considerable amounts of damage among which are atmospheric pollution and global warming. At the same time, many geologists and economists expect that the discovery rate of new pet ...
EPFL2006

Impact of inhomogeneous excitonic broadening on the strong exciton-photon coupling in quantum well nitride microcavities

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Gabriel Christmann

GaN/AlGaN and InGaN/GaN quantum wells (QWs) are investigated as the active region for room-temperature strong exciton-photon coupling in high-quality AlInN/(Al)GaN microcavities (MCs). Angular resolved photoluminescence (PL) measurements performed on an Al ...
2006

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.