Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors
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Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...
In this work we report the fabrication, co-integration and resulting performance of 2D/2D van der Waals (vdW) Vertical p-type Tunnel FETs and p-MOSFETs in a WSe2/SnSe2 material system. We demonstrate the best ever reported combined performance in terms of ...
The formation and growth of cracks by irradiation assisted stress corrosion cracking (IASCC) in light water reactor internals is a critical issue for a safe long-term operation of nuclear power plants. The IASCC susceptibility at relatively low dose is dom ...
The limitations and potential complications correlated with autogenous bone grafts have raised interest in the development of synthetic bone graft substitutes. ß-tricalcium phosphate (ß-TCP) is one of the most promising materials for synthetic bone graft s ...
This study deals with early stages of sigma phase growth in a high end austenitic stainless steel - Alloy 28 (EN 1.4563/UNS N08028). Its precipitation kinetics was followed by a series of heat treatments at 800 degrees C for holding times up to 30 000 s. T ...
In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate achieved by a nanostructured gate region in combination with a large work-function gate met ...
The semiconductor industry, governed by the Moore's law, has achieved the almost unbelievable feat of exponentially increasing performance while lowering the costs for years. The main enabler for this achievement has been the scaling of the CMOS transistor ...
In recent years, sweat has gained increasing attention from the scientific community as a new analyte for health monitoring. The main advantage with respect to the "Gold Standard" for laboratory analysis, i.e. blood, is of course the possibility of perform ...
In this paper, we present a detailed investigation of the impact of fin width (w(fin)) on tri-gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). As w(fin) is reduced, the threshold voltage (V-TH) increases, which is due ...
In this study, the authors investigate the impact of radical oxygen plasma on nitrided and annealed atomic layer deposited (ALD) SiO2 as a thick gate oxide (1.65-3 V) with a high-k/metal gate transistor. Time-dependent-dielectric-breakdown voltage, seconda ...