Publication

Effect of the nitridation of the sapphire (0001) substrate on the GaN growth

Related publications (32)

About
Privacy
Disclaimer

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Effect of the nitridation of the sapphire (0001) substrate on the GaN growth

Graph Chatbot

Chat with Graph Search

Wafer-scale MoS2 with water-vapor assisted showerhead MOCVD

Template-assisted grown III-V semiconductor nanowires: A transmission electron microscopy study

The growth and optical properties of III-V nanostructures grown by Molecular Beam Epitaxy

Selective heteroepitaxy on deeply grooved substrate: A route to low cost semipolar GaN platforms of bulk quality

Structure analysis of the YBCO layer in Ag/YBCO/metal oxide buffer/Hastelloy composite tape before and after 107 MeV Kr17+ irradiation

Formation Mechanisms and Structural Properties of Aluminium-Chromium Based Oxynitride Thin Films Synthesized by Physical Vapor Deposition

Texture change through film thickness and off-axis accommodation of (002) planes

Study of the epitaxial relationships between III-nitrides and M-plane sapphire

Characterization of a-plane grown GaN on sapphire substrates by electron microscopy

Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins