Photoluminescence emission and Raman scattering polarization in birefringent organic microcavities in the strong coupling regime
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Modifying the photonic environment of a semiconductor quantum well by embedding it in a high-reflectivity microcavity gives rise to new fundamental optical excitations, half-quantum well excitons, half-photons. These particles, called polaritons, have a li ...
This paper describes recent work on high-occupancy effects in semiconductor microcavities, with emphasis on the variety of new physics and the potential for applications that has been demonstrated recently. It is shown that the ability to manipulate both e ...
Institute of Electrical and Electronics Engineers2002
Recent work on polariton-polariton scattering in semiconductor microcavities under continuous wave excitation conditions is reviewed. For weak non-resonant laser excitation, a marked bottleneck in the polariton distribution is observed, but which is suppre ...
We show that stimulated polariton scattering in a semiconductor microcavity is observable over a wide range of laser pump angles. The ratio of idler to signal beams is found to vary strongly with angle, consistent with the expected variation of the photon ...
Two selected examples have been chosen to illustrate the ability of non-resonant Raman scattering to probe phonons in hexagonal GaN-AlN artificial structures. The angular dispersion of polar phonons is investigated in a long period GaN-AlN superlattice and ...
A new lidar instrument was developed to measure tropospheric ozone and water vapor at low altitude. The lidar uses Raman scattering of an UV beam from atm. nitrogen, oxygen, and water vapor to retrieve ozone and water-vapor vertical profiles. By numerical ...
We present a detailed study of GaN pillar arrays by atomic force microscopy (AFM), Raman spectroscopy, and photoluminescence (PL) spectroscopy. AFM is used to characterize the shape of the GaN pillars and revealed a large roughness of etched pillar surface ...
Using a first-principles density functional approach, we calculate the first-order Raman intensities of alpha -quartz. The dynamical charge tensors, vibrational frequencies and eigenmodes, and polarizability tensors are obtained within a perturbational app ...
To calculate the Raman spectrum of vitreous silica, we use a model structure consisting of a disordered network of cornersharing tetrahedra, for which the vibrational frequencies and eigenmodes were obtained previously by first principles. The Raman cross- ...
We have investigated the thermal stability of GaN using Raman scattering, Noninvasive optical monitoring of the degradation of GaN during high-temperature processing has been demonstrated. GaN samples grown by molecular-beam epitaxy (MBE) and metalorganic ...