Continuous wave stimulation in semiconductor microcavities in the strong coupling limit
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This paper describes recent work on high-occupancy effects in semiconductor microcavities, with emphasis on the variety of new physics and the potential for applications that has been demonstrated recently. It is shown that the ability to manipulate both e ...
Institute of Electrical and Electronics Engineers2002
The present work is devoted to the study of the dynamics of multi-photon processes in semiconductor heterostructures. A time-dependent description is important for understanding in detail the transient response of semiconductors excited by ultrashort optic ...
Angular-dependent emission spectra are investigated in a strongly coupled InGaAs-GaAs-AlAs-based semiconductor microcavity as a function of excitation intensity and of detuning between the uncoupled exciton and photon modes. Under conditions of nonresonant ...
Modifying the photonic environment of a semiconductor quantum well by embedding it in a high-reflectivity microcavity gives rise to new fundamental optical excitations, half-quantum well excitons, half-photons. These particles, called polaritons, have a li ...
A novel method of controlling light absorption by exciton-polaritons is presented. The coherent light-induced coupling of excitons in multiple quantum well Bragg structures is exploited to sup press dramatically the absorption. Our results show that excito ...
Exciton states in semiconductor nanostructures with disorder exhibit level repulsion, a concept known from random matrix theory. Its manifestations in time-resolved Rayleigh spectra and in the autocorrelation of optical nearfield spectra are explained, and ...
Stimulated polariton scattering in semiconductor microcavities is reported. The phenomena arise from the bosonic character of the coupled exciton-photon modes of the system. The ability to manipulate and control the polariton dispersions in microcavities i ...
We report on Raman scattering in hexagonal GaN quantum wells embedded in Al0.11Ga0.89N barriers, The six monolayers thick quantum wells, grown by molecular beam epitaxy, are deposited on a GaN buffer layer. Resonant enhancement of the Raman lines associate ...
We report on the nonlinear optical dynamical properties of excitonic complexes in CdTe modulation-doped quantum wells, due to many-body interactions among excitons, trions, and electrons. These were studied by time and spectrally resolved pump-probe experi ...
A clear signature of enhanced backscattering of excitons is observed in the directional resonant Rayleigh scattering of light from localized two-dimensional excitons in disordered quantum wells. Its spectral dependence and time dynamics are measured and th ...