102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz
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The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric rando ...
A new surface micromachining method based on porous silicon formation followed by electropolishing is presented in this paper. It generates in a single electrochemical etch step a plate of porous silicon, releases it from the substrate without using a sacr ...
The requirements of present high-performance power electronic systems are exceeding the power density, efficiency, and reliability of silicon-based devices. Silicon carbide (SiC) is a candidate of choice for high-temperature, high-speed, high-frequency, an ...
Stencil lithography is an innovative method for patterning that has a great flexibility from many points of view. It is based on shadow mask evaporation using thin silicon nitride membranes that allow the patterning of sub-100 nm features up to 100 μm in a ...
A micro-hotplate device, useful in catalytic high-temperature chemical sensors, micro-chemical reactors and as infra-red source, in particular at temperatures above 600 DEG C, comprises a thin film resistive heater (1) made of a refractory metal silicide s ...
The invention concerns a monocrystalline coating crack-free coating of gallium nitride or mixed gallium nitride and another metal, on a substrate likely to cause extensive stresses in the coating, said substrate being coated with a buffer layer, wherein: a ...
We report on the growth and properties of GaN films grown on Si(111) substrates by molecular beam epitaxy using ammonia. The properties of the layers show that our growth procedure is very efficient in order to overcome the difficulties encountered during ...
In contrast to optical immunosensors, the electrochemical detection of an immunoanalytical reaction does require a labeling, but allows an easier discrimination of specific and non-specific binding. We present a concept and first results for a multivalent ...
For pt.II see ibid. vol.73, p.7690 (1993). In order to investigate the interface between polycrystalline-silicon (poly-Si) and crystalline silicon (c-Si), which is of crucial importance for the passivation of high-voltage devices, an infrared diagnostic me ...
We demonstrate the use of copolymer micelle lithography using polystyrene-block-poly(2-vinylpyridine) reverse micelle thin films in their as-coated form to create nanopillars with tunable dimensions and spacing, on different substrates such as silicon, sil ...