Shape-engineered epitaxial InGaAs quantum rods for laser applications
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A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...
We demonstrate the feasibility and flexibility of artificial shape engineering of epitaxial semiconductor nanostructures. Novel nanostructures including InGaAs quantum rods (QRs), nanocandles, and quantum dots (QDs)-in-rods were realized on a GaAs substrat ...
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An output power up to 5 W at 1.48- m wavelength is achieved from an optically pumped semiconductor disk laser. An active region composed of an AlGaInAs/InP heterostructure grown on an InP substrate was wafer fused with an AlGaAs/GaAs Bragg reflector grown ...
Institute of Electrical and Electronics Engineers2011
Purpose – Since pulsed lasers are mainly used in selective laser sintering (SLS) – contrarily to selective laser melting (SLM) – only the exterior of the powder particles is molten while their core stays solid. The purpose of this paper is to investigate t ...
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Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2010
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