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Photoluminescence from a single InGaAs epitaxial quantum rod

Related publications (54)

Scalable Approaches to III-V Nanowires for Photodetection

III-V semiconductor nanowires have unique properties that make them ideal for advanced photodetectors on inexpensive substrates. For example, they exhibit enhanced or polarization-dependent light absorption, they can form complex heterostructures, and thei ...

EPFL2023

Scalable Nanowire Networks: Growth and Functionality

Martin George Friedl

With the rise of quantum computing and recent experiments into topological quantum computers come exciting new opportunities for III-V semiconductor quantum nanostructures. In this thesis, we explore the scalable fabrication of patterned arrays and branche ...

EPFL2020

The growth and optical properties of III-V nanostructures grown by Molecular Beam Epitaxy

Gözde Tütüncüoglu

This thesis is dedicated to the growth and characterization of the optoelectronic properties of III-V semiconductor nanostructures namely nanowires and nanoscale membranes. III-V semiconductors possess promising intrinsic properties like direct band gap, h ...

EPFL2017

Parabolic tailored-potential quantum-wires grown in inverted pyramids

Elyahou Kapon, Alok Rudra, Justyna Szeszko, Mikhail Lazarev

Quasi-one-dimensional AlGaAs quantum wires (QWRs) with parabolic heterostructure profiles along their axis were fabricated using metallorganic vapor phase epitaxy (MOVPE) On patterned (111)B GaAs substrates. Tailoring of the confined electronic states via ...

Elsevier Science Bv2015

Site-controlled InGaAs/GaAs pyramidal quantum dots grown by MOVPE on patterned substrates using triethylgallium

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Pascal Gallo, Alexey Lyasota, Clément William Tendaï Jarlov, Bruno Marie Dominique Rigal

The fabrication and characterization of site-controlled InGaAs/GaAs quantum dots (QDs) made by MOVPE using triethylgallium (TEGa) on patterned {111}B GaAs substrates are reported. Results are compared to more traditional pyramidal QD structures grown emplo ...

Elsevier Science Bv2015

Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires

Anna Fontcuberta i Morral, Martin Heiss, Eleonora Russo, Sonia Conesa Boj, Luca Francaviglia, Yannik Fontana

GaAs/Al-GaAs core-shell nanowires fabricated by molecular beam epitaxy contain quantum confining structures susceptible of producing narrow photoluminescence (PL) and single photons. The nanoscale chemical mapping of these structures is analyzed in 3D by a ...

American Institute of Physics2014

Dilute-Nitride Low-Dimensional Nanostructures Formed on Non-Planar Substrates

Romain Carron

The properties of semiconductors heterostructures of nanoscopic dimensions change from that of bulk material according to the rules of quantum mechanics. The planar quantum wells (QWs) are widely used in various diode and laser devices thanks to the relati ...

EPFL2013

Optics, morphology, and growth kinetics of GaAs/Al_{x}Ga_{1-x}As quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy

Elyahou Kapon, Alok Rudra, Daniel Oberli, Nicolas Moret

The effect of the miscut angle of vicinal substrate on the optical and morphological properties of GaAs/AlxGa1-xAs quantum wells grown by metalorganic vapor phase epitaxy is studied by means of photoluminescence (PL) and atomic force microscopy. Within sma ...

2011

Scanning Tunneling Microscopy and Luminescence of Individual Nanostructures

Theresa Lutz

A detailed investigation and characterization of the local properties of individual nanoscopic structures is of great importance for the understanding of novel physical phenomena at the nanoscale as well as for the assessment of their possible use in futur ...

EPFL2011

High-quality 1.3 lm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Romain Carron, Pascal Gallo

We investigated the composition and optical properties of GaInAsN/GaAs single quantum wells (QWs) grown on vicinal-(001) GaAs substrates using metallorganic vapor phase epitaxy with modulated nitrogen-precursor flux. A significant enhancement in N incorpor ...

American Institute of Physics2011

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