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We present a complete top-down design of a low-power multi-channel clock recovery circuit based on gated current-controlled oscillators. The flow includes several tools and methods used to specify block constraints, to design and verify the topology down t ...
With the work reported in this manuscript we have essentially contributed to the electrical characterization and modelling of high voltage MOSFETs, more particularly DMOS architectures such as X-DMOS and L-DMOS able to sustain voltages ranging from 30V to ...
Following the trend in portable wireless communications, this dissertation explores new approaches to designing of power-critical building blocks in the elementary circuit level. Specifically, the work focuses on designs of baseband continuous-time Gm-C fi ...
In this paper the advantages of using Differential Cascode Voltage Switch Pass Gate (DCVSPG) logic with regard to standard CMOS for subthreshold operation are presented. The two families are compared in terms of their performance and Energy-Delay-Product ( ...
Wireless Sensor Network (WSN) nodes require components with ultra-low power consumption, as they must operate without an external power supply. One technique for reducing consumption of a system is to scale it to a smaller technology; however, in recent te ...
In this chapter, we present the capabilities of the VHDL-AMS hardware description language for developing compact models. After a brief description of the VHDL-AMS language, we present two meaningful case studies on design oriented models of MOSFET. The fi ...
This paper presents a methodology of a basic analog blocks retargeting from bulk to fully depleted (FD) SOI technology. The design methodology is generally not related to the model used for the circuit simulations. However, the proposed one is closely link ...
This paper presents a process for the co-fabrication of self-aligned NMOS and single electron transistors made by gated polysilicon wires. The realization of SET–MOS hybrid architectures is also reported. The proposed process exploits an original low energ ...
The IGBT transistor, associating the conduction advantages of the bipolar transistor and the switching advantages of the MOSFET transistor, is widely used in medium and high power applications with an operating voltage of 1.2kV to 4.5kV. New topologies, re ...
Since the emergence of Silicon On Insulator (SOI) technology the research activities have been concentrated on a detailed analysis of SOI devices and their use in different application fields (low-voltage, low-power circuits, high temperature electronics, ...
