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Standard static CMOS logic is responding to the requirement of high frequency and low power of digital systems. However, the digital switching noise generated by this logic is not suited for the design of performance mixed-signal integrated systems. In mix ...
The accessory e.g. lamp for illumination of the hand-held instrument (L) and the excitation coils (B1-B3) of the brushless motor (M) are all supplied with current through a rotary connector (F) from a control circuit (C1) within a fixed part of the machine ...
Dynamic power management is a design methodology aiming at controlling performance and power levels of digital circuits and systems, with the goal of extending the autonomous operation time of battery-powered systems, providing graceful performance degrada ...
A fully functional arrangement of a 2×1 array of active and self-detecting cantilevers, stress sensing metal-oxide-semiconductor transistors and thermal bimorph actuators was introduced. One of the two cantilevers was used as a reference while the other on ...
In this article an integrated force sensor based on a stress-sensing MOS transistor is introduced for applications in scanning force microscopy (SFM) . The sensor configuration will be described, and theoretical and experimental investigations of the sensi ...
A comprehensive study of: leakage conduction in Pb(ZrxTi1-x)O-3 films with Pt electrodes is carried out. The conduction properties of films prepared in different ways (sol-gel coating, metalorganic chemical vapor deposition, sputtering) were studied by usi ...
Using the epitaxy-on electronics (EoE) process, self-electrooptic effect devices (SEED's) have been monolithically integrated with VLSI GaAs electronics., The EoE approach provides both depletion-mode and enhancement-mode MESFET's for large-scale, high-den ...
This paper presents a detailed analysis of CSL (Current Steering Logic) [1] and compares its characteristics with FSCL (Folded Source Coupled Logic) [1,2,3], two logic families intended to be applied in mixed-mode CMOS circuits. These logic families genera ...
Using a delta-doped GaAs/AlGaAs heterostructure with a 10 nm spacer layer, we exploit the metastable nature of the DX centers at low temperatures to control electrostatically their net frozen charge density. The concentration of DX(-) centers at 77 K is on ...
Using the atomic force microscope (AFM), we have fabricated a metal oxide semiconductor field-effect transistor (MOSFET) on silicon with an effective channel length of 0.1 um. The lithography at the gate level was performed with the scanning tip of the AFM ...
