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During the turn-on process insulated gate bipolar transistors (IGBTs) traverse a quasi-saturation region from the off.state to the on-state (saturation). The additional voltage drop due to the quasi.saturation of the junction hardly depends on the DC-link ...
Deep-submicron CMOS designs maintain high transistor switching speeds by scaling down the supply voltage and proportionately, reducing the transistor threshold voltage. Lowering the threshold voltage increases leakage energy dissipation due to subthreshold ...
This paper presents a micropower second-order low-pass filter using the log-domain principle and integrated in a 0.35-μm CMOS process. It has been designed as an antialiasing filter for a DECT transceiver with a 45-kHz nominal cutoff frequency. The circuit ...
During the turn-on process insulated gate bipolar transistors (IGBTs) traverse a quasi-saturation region from the off-state to the on-state (saturation). The additional voltage drop due to the quasi-saturation of the junction hardly depends on the DC-link ...
This work reports on thermally isolated electronic components for gas sensing applications. The device is composed of an array of 4 MOSFET, a diode and a semiconductor resistor integrated on a micro-hotplate, which is fabricated using bulk micromachining o ...
Tuning and high frequency capabilities and dynamic range performance of continuous-time oscillators and filters, using the weak inversion operation mode of a low-cost conventional 0.5 μm CMOS technology and multi-tanh linearisation technique are examined. ...
Static energy due to subthreshold leakage current is projected to become a major component of the total energy in high performance microprocessors. Many studies so far have examined and proposed techniques to reduce leakage in on-chip storage structures. I ...
Deep-submicron CMOS designs maintain high transistor switching speeds by scaling down the supply voltage and proportionately reducing the transistor threshold voltage. Lowering the threshold voltage increases leakage energy dissipation due to subthreshold ...
Accurate modeling and efficient parameter extraction of a small signal equivalent circuit of MOS transistors for high-frequency operation are presented. The small-signal equivalent circuit is based on the quasi-static approximation which was found to be ad ...
This paper reports on the modeling and key design aspects of an innovative MEMS device: the suspended-gate MOSFET (SG-MOSFET). Based on the coupled-electromechanical equations describing the suspended gate actuation, we present the investigation of the pul ...
