Publication

Decomposition, diffusion, and growth rate anisotropies in self-limited profiles during metalorganic vapor-phase epitaxy of seeded nanostructures

Related publications (52)

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Scalable Approaches to III-V Nanowires for Photodetection

Nicholas Paul Morgan

III-V semiconductor nanowires have unique properties that make them ideal for advanced photodetectors on inexpensive substrates. For example, they exhibit enhanced or polarization-dependent light absorption, they can form complex heterostructures, and thei ...

EPFL2023

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

Elison de Nazareth Matioli, Alessandro Floriduz

In this note, we demonstrate the high-temperature growth of GaN on ScAlMgO4 substrates by metalorganic vapor phase epitaxy when a thin Al film is deposited ex situ on the ScAlMgO4 surface, prior to GaN growth. Mirror-like high-quality GaN epitaxial layers ...

IOP Publishing Ltd2022

Nanopillars Enabling III-V Integration on Si (100) and (111)

Lucas Güniat

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

EPFL2021

Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient light emission in ...

EPFL2020

The growth and optical properties of III-V nanostructures grown by Molecular Beam Epitaxy

Gözde Tütüncüoglu

This thesis is dedicated to the growth and characterization of the optoelectronic properties of III-V semiconductor nanostructures namely nanowires and nanoscale membranes. III-V semiconductors possess promising intrinsic properties like direct band gap, h ...

EPFL2017

, , , , ,

We demonstrate the self-formation of hexagonal nanotemplates on GaAs (111)B substrates patterned with arrays of inverted tetrahedral pyramids during metal-organic vapor phase epitaxy and its role in producing high-symmetry, site-controlled quantum dots (QD ...

Tsinghua Univ Press2016

, , ,

We discuss the impact of kinetics, and in particular the effect of the Ehrlich-Schwobel barrier (ESB), on the growth and surface morphology of homoepitaxial GaN layers. The presence of an ESB can lead to various self-assembled surface features, which stron ...

Elsevier Science Bv2016

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Anna Fontcuberta i Morral, Federico Matteini, Heidi Andrea Potts, Jean-Baptiste Leran, Vladimir Dubrovskii, Jelena Vukajlovic Plestina, Frank Meyer, Ruben Ricca

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam ...

Institute of Physics2016

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Nicolas Grandjean, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Marco Malinverni, Marco Rossetti, Jean-Michel Jacques Lamy, Denis Martin, Lise Lahourcade

We demonstrate hybrid laser diodes by combining n-type layers and an active region grown by metal organic vapor phase epitaxy with p-type layers grown by molecular beam epitaxy. These p-doped layers, grown at 740 degrees C, exhibit state-of-the-art electri ...

Japan Society of Applied Physics2015

Over the last two decades III-nitride optoelectronic devices have experienced an impressive evolution in terms of performance. However, their potential is far from being fully exploited. Although they offer bandgaps from the deep UV to the infrared spectra ...

EPFL2015