Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers
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Machine learning and data processing algorithms have been thriving in finding ways of processing and classifying information by exploiting the hidden trends of large datasets. Although these emerging computational methods have become successful in today's ...
Here we use triple-cation metal-organic halide perovskite single crystals for the transistor channel of a flash memory device. Moreover, we design and demonstrate a 10 nm thick single-layer nanofloating gate. It consists of a ternary blend of two organic s ...
Two-dimensional materials (2DMs) have found potential applications in many areas of electronics, such as sensing, memory systems, optoelectronics, and power. Despite an intense experimental work, the literature is lacking of accurate modeling of nonvolatil ...
As more and more high density memories are required to satisfy the Internet of Things ecosystem, academics and industrials are looking for an intermediate solution to fill the gap between DRAM and Flash NAND in the memory hierarchy. The emergence of Resist ...
The evolution of computing has lead to very different realizations to cope with performance and energy consumption density, two competing factors that are not obvious to reconcile. The current semiconductor technologies, mainly FinFETs and FDSoI, provide u ...
We have witnessed a wide range of theoretical as well as experimental investigations to envisage external stimuli induced changes in electronic, optical and magnetic properties in the metal organiccomplexes, while hybrid perovskites have recently joined th ...
There once was a harsh competition between different computer memory technologies, and now we cheer triumph for the Random Access-Memory (RAM) devices, -- cheap, fast, tiny, stable. The competing Magnetic Bubble Memory had faded away as magnetic bubbles ar ...
The functionalities and performances of today's computing systems are increasingly dependent on the memory block. This phenomenon, also referred as the Von Neumann bottleneck, is the main motivation for the research on memory technologies. Despite CMOS tec ...
The implementation and operation of the nonvolatile ferroelectric memory (NVM) tunnel field effect transistors with silicon-doped HfO2 is proposed and theoretically examined for the first time, showing that ferroelectric nonvolatile tunnel field effect tra ...
With the continuous scaling of CMOS technology, integrating an embedded high-density non-volatile memory appears to be more and more costly and technologically challenging. Beyond floating-gate memory technologies, bipolar resistive random access memories ...